MMFT2955E |
RFQ for MMFT2955E Required Field |
 |
| Technical/Catalog Information | MMFT2955ET1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.2A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 600mA, 10V |
| Input Capacitance (Ciss) @ Vds | 460pF @ 20V |
| Power - Max | 800mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMFT2955ET1 MMFT2955ET1 MMFT2955ET1OSDKR ND MMFT2955ET1OSDKRND MMFT2955ET1OSDKR |
| Product | Manufacturers | Pack | D/C |
| MMFT2955E | - | SOT223 | 04+ |
This advanced E-FET is a TMOS medium power MOSFE designed to withstand high energy in the avalanche and commuta-tion modes. This new energy efficient device also offers a drain-to-source diode with a fast recovery time. Designed for l voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT-223 package which is designed for medium power surfac mount applications.
Features |
| ` Silicon Gate for Fast Switching Speeds` Low RDS(on) -0.3 max` The SOT-223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die` Available in 12 mm Tape and Reel Use MMFT2955ET1 to order the 7 inch/1000 unit reel. Use MMFT2955ET3 to order the 13 inch/4000 unit reel. |
|
Rating |
Symbol |
Value |
Unit |
| Drain-Cto-CSource Volta |
VDS |
60 |
Vdc |
| Gate-Cto-CSource Voltage - Continu |
VGS |
±15 | |
| Drain Current - Continuou Drain Current - Pulse |
ID |
1.2 |
Adc |
| Total Power Dissipation @ TA = 25 Derate above 25 |
PD(1) |
0.8 |
Watts |
| Operating and Storage Temperature Range |
TJ , Tstg |
-65 to 150 |
|
| Single Pulse Drain-Cto-CSource Avalanche Energy - Startin TJ= 25 (VDD = 60 V, VGS = 10 V, Peak IL = 1.7 A, L = 0.2 mH, RG = 25 ) |
EAS |
108 |
mJ |
